publication date : oct 2011 1 < silicon rf power mos fet ( discrete ) > rd 20hmf 1 rohs compliance, silicon mosfet power transistor,900mhz,20w description rd20hmf1 is a mos fet type transistor specifically designed for 900mhz - band rf power amplifiers applications. features high power g ain: pout> 20 w, gp> 8.2 db @vdd= 12.5 v,f= 900m hz high efficiency: 55 %typ. application for output stage of high power amplifiers in 900mhz band mobile radio sets. rohs complian t rd 20hmf 1 - 101 is a rohs complian t products. rohs compliance is indicate by the letter ?g? after the lot marking . absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit v dss drain to source voltage vgs=0v 30 v v gss g ate to source voltage vds=0v +/ - 20 v pch channel dissipation tc=25 c 71.4 w pin input power zg=zl=50 ? 6 w id drain current - 6 a t ch channel temperature - 175 c tstg storage temperature - - 40 to +1 75 c rth j - c thermal resistance junction to case 2. 1 c/w note 1: above parameters are guaranteed independently. outline drawing 1 4 . 0 + / - 0 . 4 3 . 0 + / - 0 . 4 5 . 1 + / - 0 . 5 r1.6 2 . 3 + / - 0 . 3 4-c1 2 6 . 6 + / - 0 . 3 0 . 1 0 2.8+/-0.3 3 18.0+/-0.3 22.0+/-0.3 7.6+/-0.3 1 7.2+/-0.5 pin 1.drain 2.source 3.gate unit:mm
< silicon rf power mos fet ( discrete ) > rd20hmf1 rohs compliance, silicon mosfet power transistor,900mhz,20w publication date : oct 2011 2 electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =1 7 v, v gs =0v - - 5 u a i gss ga te to source leak current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold v oltage v ds =1 2 v, i ds =1ma 1.0 - 3.0 v pout output power f= 900 mhz , v dd = 12.5 v 20 25 - w ? d drain efficiency pin= 3.0w, idq=1.0a 50 55 - % load vswr tolerance v dd =15.2v,po=20w(pincontro l) idq=1.0a,zg=50 ? load vswr=20:1(all phase) no destroy - note : above parameters , ratings , limits and conditions are subject to change.
< silicon rf power mos fet ( discrete ) > rd20hmf1 rohs compliance, silicon mosfet power transistor,900mhz,20w publication date : oct 2011 3 typical characteristics channnel dissipation vs. ambient temperature 0 20 40 60 80 100 0 40 80 120 160 200 ambient temperature ta(c) c h a n n e l d i s s i p a t i o n p c h ( w ) vds-ids characteristics 0 2 4 6 8 10 0 2 4 6 8 10 vds(v) i d s ( a ) ta=+25c vgs=4.5v vgs=4v vgs=3.5v vgs=3v vgs=2.5v vgs=2v vgs=5v vds vs. ciss characteristics 0 20 40 60 80 100 0 5 10 15 20 vds(v) c i s s ( p f ) ta=+25c f=1mhz vds vs. coss characteristics 0 20 40 60 80 100 120 140 0 5 10 15 20 vds(v) c o s s ( p f ) ta=+25c f=1mhz vds vs. crss characteristics 0 2 4 6 8 10 12 14 0 5 10 15 20 vds(v) c r s s ( p f ) ta=+25c f=1mhz vgs-ids characteristics 0 2 4 6 8 10 0 1 2 3 4 5 vgs(v) i d s ( a ) ta=+25c vds=10v
< silicon rf power mos fet ( discrete ) > rd20hmf1 rohs compliance, silicon mosfet power transistor,900mhz,20w publication date : oct 2011 4 typical characteristics pin-po characteristics 0 10 20 30 40 50 20 25 30 35 40 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=900mhz vdd=12.5v idq=1.0a po gp vdd-po characteristics 0 5 10 15 20 25 30 35 4 6 8 10 12 14 vdd(v) p o ( w ) 0 1 2 3 4 5 6 7 i d d ( a ) po idd ta=25c f=900mhz pin=3.0w idq=1.0a zg=zi=50 ohm pin-po characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 pin(w) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 120 d ( % ) po d idd ta=25c f=900mhz vdd=12.5v idq=1.0a
< silicon rf power mos fet ( discrete ) > rd20hmf1 rohs compliance, silicon mosfet power transistor,900mhz,20w publication date : oct 2011 5 test circuit(f=900mhz) 22 f,50v l2:1turn,i.d3mm,d1.5mm silver plateted copper wire 6pf 6pf 5pf 5pf 90 17 38 2pf 6pf 10.8 4.8 8 c2 17 11 8 100 90 micro strip line width=4.2mm/50ohm,er:2.7,t=1.6mm note:board material ptfe substrate c1:1000pf,22000pf in parallel rf-out c1 l1:1turn,i.d3mm,d1.5mm silver plateted copper wire vgg vdd rf-in 82pf dimensions:mm 8pf 9pf 82pf 15 53 100 4.7ohm l1 c2:100pf*2 in parallel c3 c3:1000pf,22000pf in parallel l2 900mhz rd20hmf1
< silicon rf power mos fet ( discrete ) > rd20hmf1 rohs compliance, silicon mosfet power transistor,900mhz,20w publication date : oct 2011 6 input/output impedance vs.frequency characteristics zin , zout f zin zout (mhz) (ohm) (ohm) conditions 900 1.78+j2.50 2.52+j1.76 po= 20 w, vdd=12.5v,pin= 3 w zo=10 ? f=900mhz zin f=900mhz zout
< silicon rf power mos fet ( discrete ) > rd20hmf1 rohs compliance, silicon mosfet power transistor,900mhz,20w publication date : oct 2011 7 rd20hmf1 s-parameter data (@vdd=12.5v,id=800ma) freq [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.862 -168.4 8.814 83.5 0.016 -4.3 0.798 -172.5 200 0.868 -173.3 4.213 70.7 0.014 -10.9 0.813 -173.9 300 0.872 -174.8 2.614 60.4 0.012 -11.0 0.834 -174.6 400 0.882 -174.8 1.820 52.2 0.011 -16.2 0.856 -174.8 500 0.897 -176.1 1.343 44.6 0.009 -12.5 0.876 -175.6 600 0.912 -176.8 1.028 38.7 0.007 -5.3 0.887 -175.6 700 0.917 -177.8 0.812 33.5 0.006 7.6 0.907 -176.6 800 0.926 -178.6 0.663 29.4 0.005 25.8 0.920 -177.9 900 0.934 -179.3 0.560 25.9 0.006 43.8 0.930 -178.6 1000 0.947 179.5 0.482 23.0 0.007 54.0 0.941 -179.0 1100 0.953 178.6 0.421 19.7 0.008 62.2 0.947 -179.9 1200 0.959 177.2 0.358 16.8 0.009 68.5 0.950 179.3 1300 0.962 176.4 0.320 14.3 0.011 70.8 0.949 178.5 1400 0.966 174.8 0.292 12.3 0.013 75.6 0.951 177.8 1500 0.965 173.6 0.269 10.2 0.015 74.7 0.954 176.7 1600 0.963 172.0 0.244 8.1 0.016 75.4 0.944 175.4 1700 0.958 170.4 0.222 6.2 0.018 76.9 0.946 174.7 1800 0.956 168.8 0.202 3.8 0.020 74.8 0.949 173.2 1900 0.955 166.9 0.186 1.9 0.022 74.8 0.945 171.8 2000 0.953 165.2 0.177 0.3 0.024 73.3 0.947 170.1 2100 0.954 163.2 0.168 -2.0 0.026 74.1 0.945 168.6 2200 0.954 160.9 0.160 -3.6 0.028 71.7 0.945 166.9 2300 0.956 159.0 0.151 -6.2 0.030 70.0 0.943 164.7 2400 0.951 156.6 0.139 -8.1 0.032 67.4 0.935 162.6 2500 0.954 154.8 0.129 -10.0 0.034 65.4 0.935 160.4 2600 0.946 152.6 0.124 -12.1 0.037 63.6 0.936 158.0 2700 0.949 150.4 0.114 -13.3 0.039 60.1 0.934 155.2 2800 0.942 148.1 0.105 -13.0 0.040 56.5 0.933 152.4 2900 0.946 146.1 0.099 -12.1 0.041 54.0 0.932 149.9 3000 0.938 144.1 0.094 -10.3 0.044 51.0 0.931 147.2 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > rd20hmf1 rohs compliance, silicon mosfet power transistor,900mhz,20w publication date : oct 2011 8 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > rd20hmf1 rohs compliance, silicon mosfet power transistor,900mhz,20w publication date : oct 2011 9 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporat ion puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to giv e due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellect ual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any p roduct data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on pr oducts at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporati on or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric co rporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semicond uctor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system b efore making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corp oration semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor pro duct distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government an d cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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